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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1440 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *Built-in Damper Diode APPLICATIONS *Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w w scs .i w 1500 V 1500 V 5 V 3.5 A 13 A 3.5 A 2.5 W .cn mi e ICP Collector Current-Peak IBP Base Current-Peak Collector Power Dissipation @ Ta= 25 PC Collector Power Dissipation @ TC= 25 TJ Junction Temperature 65 130 Tstg Storage Temperature Range -55~130 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1440 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A VCB= 750V; IE= 0 VCB= 1500V; IE= 0 IC= 2.5A; VCE= 10V 1.5 50 1.0 4 15 V A mA ICBO Collector Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product IC= 0.5A; VCE= 10V VECF C-E Diode Forward Voltage ts Storage Time tf Fall Time w w. w IF= 4A IC= 2.5A, IBend= 0.8A, Lleak= 5H .cn mi cse is 2 MHz 2.2 V 9.0 s 0.8 s isc Websitewww.iscsemi.cn 2 |
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